Equipment & materials
Oxide Wafers
Oxidized silicon substrates for semiconductor and microfabrication processes.
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Equipment & materials / Materials
SOI Wafers
Specify device layer, buried oxide, handle wafer and orientation for your application.
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Product information
Reference specifications.
These ranges are reference specifications from the 2022 product information. Please request current availability and confirm your required wafer specification.
| Wafer diameters | 100 / 125 / 150 / 200 mm |
|---|---|
| Handle thickness | 200–1000 µm for 100/125/150 mm; 500–750 µm for 200 mm |
| Stack thickness | 280–1250 µm |
| Buried oxide | 0.2–5 µm thermal oxide |
| Device layer | ≥1.5 µm for 100/125/150 mm; 5–300 µm for 200 mm |
| Orientation | <100> / <111> / <110> |
Reference information: 2022 technical ranges; included in the September 2025 portfolio. Final specifications are confirmed in the quotation. Ask a technical question ↗
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