YSD
LP3000 Direct-Write Lithography System
Laser direct writing for photomasks, wafers and microfabrication applications.
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Maskless exposure for research, prototyping and small-batch wafer processing.
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Specifications are reference information; available configurations, performance and lead time are confirmed in your quotation.
| Minimum lines and spaces | 2 µm |
|---|---|
| Minimum feature size | 1 µm |
| CD uniformity (3σ) | 500 nm |
| Edge roughness (3σ) | 150 nm |
| Frontside overlay (3σ) | 500 nm |
| Maximum write speed | 1200 mm²/min |
| Light source (undated equipment sheet) | 405 nm or 375 nm |
| Substrate thickness (undated equipment sheet) | 0.1–5 mm |
| Autofocus dynamic range (undated equipment sheet) | 150 µm |
| Optional functions (undated equipment sheet) | Backside alignment; EFEM |
Reference information: September 2025 company information and an undated equipment sheet, as noted in the table. Final specifications are confirmed in the quotation. Ask a technical question ↗
Share your application, substrate and target specification.